SiGe drift base bipolar transistor with self-aligned selective CVD-tungsten electrodes
- Autor
- UGAJIN, M; KUNII, Y; KUWAGAKI, M; KONAKA, S
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, Japan - Fuente
I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 3, pp 427-432 ; ref : 18 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Campo Científico
- Electronics
- Editor
- Institute of Electrical and Electronics Engineers, New York, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Autoalignement Caractéristique électrique Concentration impureté Contact métal semiconducteur Contact électrique Distribution concentration Dépôt chimique phase vapeur Fabrication microélectronique Germanium Siliciure Gravure sélective Processus fabrication Tungstène Ge Si Transistor bipolaire
- Palabra clave (in)
- Self alignment Electrical characteristic Impurity density Semiconductor metal contact Electric contact Concentration distribution Chemical vapor deposition Microelectronic fabrication Germanium Silicides Selective etching Production process Tungsten Bipolar transistor
- Palabra clave (es)
- Autoalineación Característica eléctrica Concentración impureza Contacto metal semiconductor Contacto eléctrico Distribución concentración Depósito químico fase vapor Fabricación microeléctrica Germanio Siliciuro Grabado selectivo Proceso fabricación Wolframio
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Disciplina
- Electronics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4130441
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.275230 
https://dx.doi.org/10.1109/16.275230
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