One-dimensional Monte Carlo analysis of electron transport in submicrometre silicon structures
- Author
- MARTIN, M. J; GONZALEZ, T; PARDO, D; VELAZQUEZ, J. E
Univ. Salamanca, fac. cienc., dep. física aplicada, 37008 Salamanca, Spain - Source
Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1316-1323 ; ref : 32 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Anisotropie Densité porteur charge Etude théorique Homojonction Méthode Monte Carlo Phénomène transport Porteur libre Propriété volume Silicium Simulation Structure bande Vitesse dérive Si
- Keyword (en)
- Anisotropy Carrier density Theoretical study Homojunctions Monte Carlo method Transport processes Free carrier Bulk properties Silicon Simulation Band structure Drift velocity
- Keyword (es)
- Portador libre
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40L Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4151578
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/9/7/004 
https://dx.doi.org/10.1088/0268-1242/9/7/004
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