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One-dimensional Monte Carlo analysis of electron transport in submicrometre silicon structures

Author
MARTIN, M. J; GONZALEZ, T; PARDO, D; VELAZQUEZ, J. E
Univ. Salamanca, fac. cienc., dep. física aplicada, 37008 Salamanca, Spain
Source

Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1316-1323 ; ref : 32 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Anisotropie Densité porteur charge Etude théorique Homojonction Méthode Monte Carlo Phénomène transport Porteur libre Propriété volume Silicium Simulation Structure bande Vitesse dérive Si
Keyword (en)
Anisotropy Carrier density Theoretical study Homojunctions Monte Carlo method Transport processes Free carrier Bulk properties Silicon Simulation Band structure Drift velocity
Keyword (es)
Portador libre
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40L Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pacs
7340L Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4151578

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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