On the nature and structures of different heat treatment centres in n- and p-type silicon
- Author
- MEILWES, N1 ; SPAETH, J. M1 ; EMTSEV, V. V; OGANESYAN, G. A
[1] Univ.-GH Paderborn, Fachbereich Physik, 33098 Paderborn, Germany - Source
Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1346-1353 ; ref : 25 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition bore Addition carbone Addition phosphore Conducteur type n Densité électron Défaut ENDOR Effet Hall Etude expérimentale Matériau dopé Matériau semiconducteur RPE Semiconducteur type P Silicium Traitement thermique Si:B C P
- Keyword (en)
- Boron additions Carbon additions Phosphorus additions N-type conductors Electron density Defects ENDOR Hall effect Experimental study Doped materials Semiconductor materials ESR P-type conductors Silicon Heat treatments
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70F Magnetic resonances and relaxations in condensed matter, mössbauer effect / 001B70F30 Electron paramagnetic resonance and relaxation / 001B70F30M Color centers and other defects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4151582
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/9/7/008 
https://dx.doi.org/10.1088/0268-1242/9/7/008
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