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Structure and properties of deeply Li-doped polyacenic semiconductor materials beyong C6Li stage

Author
YATA, S1 ; KINOSHITA, H1 ; KOMORI, M1 ; ANDO, N1 ; KASHIWAMURA, T1 ; HARADA, T1 ; TANAKA, K; YAMABE, T
[1] Kanebo Ltd, Development Laboratories, Miyakojima-ku, Osaka 534, Japan
Source

Synthetic metals. 1994, Vol 62, Num 2, pp 153-158 ; ref : 16 ref

CODEN
SYMEDZ
ISSN
0379-6779
Scientific domain
Electronics; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Acène polymère Capacité stockage Conductivité électrique Densité énergie Effet concentration Electrode Etude expérimentale Lithium Polymère dopé Semiconducteur Utilisation Propriété électrique
Keyword (en)
Acene polymer Storage capacity Electrical conductivity Energy density Concentration effect Electrodes Experimental study Lithium Doped polymer Semiconductor materials Use Electrical properties
Keyword (es)
Aceno polímero Capacidad almacenaje Conductividad eléctrica Densidad energía Efecto concentración Electrodo Estudio experimental Litio Polímero dopado Semiconductor(material) Utilización Propiedad eléctrica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D09 Physicochemistry of polymers / 001D09D Organic polymers / 001D09D04 Properties and characterization / 001D09D04D Electrical, magnetic and optical properties

Discipline
Physical chemistry of polymers
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4157194

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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