Interstitial defects on {113} in Si and Ge line defect configuration incorporated with a self-interstitial atom chain
- Author
- TAKEDA, S1 ; KOHYAMA, M; IBE, K
[1] Osaka univ., coll. gen. eduation, dep. physics, Toyonaka, Osaka 560, Japan - Source
Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1994, Vol 70, Num 2, pp 287-312 ; ref : 1 p
- CODEN
- PMAADG
- ISSN
- 0141-8610
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Taylor & Francis, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffraction électron Défaut planaire Etude expérimentale Germanium Interstitiel MET Matériau semiconducteur Méthode haute résolution Silicium Simulation Ge Si Non métal
- Keyword (en)
- Electron diffraction Planar defects Experimental study Germanium Interstitials TEM Semiconductor materials High-resolution methods Silicon Simulation Nonmetals
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16B Transmission, reflection and scanning electron microscopy(including ebic)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4171611
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/01418619408243186 
https://dx.doi.org/10.1080/01418619408243186
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