Submicron T-shaped gate HEMT fabrication using deep-UV lithography
- Author
- CHANG, E. Y1 ; LIN, K. C; LIU, E. H1 ; CHANG, C. Y1 ; CHEN, T. H; CHEN, J
[1] National Chiao-Tung univ., inst. materials sci. eng., Hsin-chu, Taiwan, Province of China - Source
IEEE electron device letters. 1994, Vol 15, Num 8, pp 277-279 ; ref : 6 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique électrique Composé III-V Composé binaire Etude expérimentale Fabrication microélectronique Forme en T Gallium Arséniure Grille transistor Irradiation UV Lithographie Photolithographie Transistor mobilité électron élevée As Ga GaAs
- Keyword (en)
- Electrical characteristic III-V compound Binary compound Experimental study Microelectronic fabrication T shape Gallium Arsenides Transistor gate Ultraviolet irradiation Lithography Photolithography High electron mobility transistor
- Keyword (es)
- Característica eléctrica Compuesto III-V Compuesto binario Estudio experimental Fabricación microeléctrica Forma de una T Galio Arseniuro Rejilla transistor Irradiación UV Litografía Fotolitografía Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4181010
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/55.296215 
https://dx.doi.org/10.1109/55.296215
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