Surface LTT - film structure with In doping
- Author
- KLIMOV, A. E; KRIVOPALOV, D. V; NEZVESTNYI, I. G; SHUMSKY, V. N; PETIKOV, N. I; TORLIN, M. A; FEDOSENKO, E. V
Inst. semiconductor physics, Novosibirsk 630090, Russian Federation - Source
Applied surface science. 1994, Vol 78, Num 4, pp 413-420 ; ref : 5 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- AES Addition indium Composé ternaire Epitaxie jet moléculaire Etain tellurure Etude expérimentale MEB Matériau dopé Photoconductivité Plomb tellurure Profil profondeur Rayon X Relation fabrication propriété Spectrométrie photoélectron Structure surface Séparation phase Pb Sn Te PbSnTe:In Composé minéral
- Keyword (en)
- AES Indium additions Ternary compounds Molecular beam epitaxy Tin tellurides Experimental study SEM Doped materials Photoconductivity Lead tellurides Depth profiles X radiation Fabrication property relation Photoelectron spectroscopy Surface structure Phase separation Inorganic compounds
- Keyword (es)
- Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4186774
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(94)90065-5 
https://dx.doi.org/10.1016/0169-4332(94)90065-5
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