Optical measurement of the distribution of damage in ion-implanted GaAs
- Author
- KRAISINGDECHA, P1 ; SYWE, C1 ; GAL, M1 ; TAN, H. H; JADADISH, C
[1] Univ. New South Wales, school physics, Kensington NSW 2033, Australia - Source
Semiconductor science and technology. 1994, Vol 9, Num 8, pp 1489-1492 ; ref : 22 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Effet physique rayonnement Effet température Etude expérimentale Gallium arséniure Implantation ion Matériau semiconducteur Orientation cristalline Profil profondeur Spectre réflexion Spectre visible As Ga GaAs Composé minéral
- Keyword (en)
- Physical radiation effects Temperature effects Experimental study Gallium arsenides Ion implantation Semiconductor materials Crystal orientation Depth profiles Reflection spectrum Visible spectra Inorganic compounds
- Keyword (es)
- Espectro reflexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40H Other nonmetals
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4201567
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/9/8/008 
https://dx.doi.org/10.1088/0268-1242/9/8/008
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