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Optical measurement of the distribution of damage in ion-implanted GaAs

Author
KRAISINGDECHA, P1 ; SYWE, C1 ; GAL, M1 ; TAN, H. H; JADADISH, C
[1] Univ. New South Wales, school physics, Kensington NSW 2033, Australia
Source

Semiconductor science and technology. 1994, Vol 9, Num 8, pp 1489-1492 ; ref : 22 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Effet physique rayonnement Effet température Etude expérimentale Gallium arséniure Implantation ion Matériau semiconducteur Orientation cristalline Profil profondeur Spectre réflexion Spectre visible As Ga GaAs Composé minéral
Keyword (en)
Physical radiation effects Temperature effects Experimental study Gallium arsenides Ion implantation Semiconductor materials Crystal orientation Depth profiles Reflection spectrum Visible spectra Inorganic compounds
Keyword (es)
Espectro reflexión
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40H Other nonmetals

Pacs
7840H Other nonmetallic inorganics

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4201567

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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