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Optical properties of Cd0.8Zn0.2Te thin films

Author
SAMANTA, B; SHARMA, S. L; CHAUDHURI, A. K
Indian inst. technology, dep. physics meteorology, Kharagpur 721 302, India
Source

Indian journal of pure & applied physics. 1994, Vol 32, Num 1, pp 62-67 ; ref : 20 ref

CODEN
IJOPAU
ISSN
0019-5596
Scientific domain
Physics
Publisher
Council of Scientific & Industrial Research, New Delhi
Publication country
India
Document type
Article
Language
English
Keyword (fr)
Bande interdite Cadmium tellurure Composé ternaire Couche mince Effet dimensionnel Effet température Etude expérimentale Evaporation sous vide Indice réfraction Limite absorption Matériau semiconducteur Relation fabrication propriété Spectre absorption Zinc tellurure Cd Te Zn Cd0,8Zn0,2Te Composé minéral Métal transition composé
Keyword (en)
Energy gap Cadmium tellurides Ternary compounds Thin films Size effect Temperature effects Experimental study Vacuum evaporation Refractive index Absorption edge Semiconductor materials Fabrication property relation Absorption spectra Zinc tellurides Inorganic compounds Transition element compounds
Keyword (es)
Relación fabricación propiedad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66H Ii-vi semiconductors

Pacs
7866H II-VI semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4210237

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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