Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers
- Author
- SMITH, G. M; FORBES, D. V; COLEMAN, J. J; VERDEYEN, J. T
Univ. Illinois, microelectronics lab., Urbana IL 61801, United States - Source
IEEE photonics technology letters. 1993, Vol 5, Num 8, pp 873-876 ; ref : 11 ref
- ISSN
- 1041-1135
- Scientific domain
- Electronics; Optics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Cavité laser Champ proche Clivage Composé binaire Composé ternaire Contrainte Courant seuil Etude expérimentale Gain Gallium arséniure Gravure ionique réactive Indium arséniure Laser semiconducteur MEB Puits quantique Réflecteur Spectre émission Al As Ga Al0,20Ga0,80As As Ga In As Ga GaAs In0,20Ga0,80As
- Keyword (en)
- Aluminium arsenides Laser cavities Near field Cleavage Binary compounds Ternary compounds Stresses Threshold current Experimental study Gain Gallium arsenides Reactive ion etching Indium arsenides Semiconductor lasers SEM Quantum wells Reflectors Emission spectra
- Keyword (es)
- Campo próximo Grabado iónico reactivo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B60 Laser optical systems: design and operation / 001B40B60D Resonators, cavities, amplifiers, arrays, and rings
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4223369
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/68.238239 
https://dx.doi.org/10.1109/68.238239
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