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Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers

Author
HIGASHI, T; OGITA, S; SODA, H; KOBAYASHI, H; KURAKAKE, H; AOKI, O; OKAZAKI, N
Fujitsu Laboratories Ltd, Atsugi, Kanagawa 243-01, Japan
Source

IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 1918-1923 ; ref : 10 ref

CODEN
IEJQA7
ISSN
0018-9197
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Asymétrie Courant injection Distribution non uniforme Efficacité quantique Etude expérimentale Etude théorique Facette Hole burning Laser semiconducteur Miroir Optimisation Puits quantique
Keyword (en)
Asymmetry Injection current Non uniform distribution Quantum efficiency Experimental study Theoretical study Facet Hole burning Semiconductor lasers Mirrors Optimization Quantum wells
Keyword (es)
Corriente inyección Distribución no uniforme Faceta
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Pacs
4255P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4228514

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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