Effect of extinction on neutron diffraction intensity of silicon single crystals
- Author
- SOEJIMA, Y; AOMINE, N; YAMADA, H; KOGA, T; OKAZAKI, A
Kyushu univ., dep. physics, Fukuoka 812, Japan - Source
Japanese journal of applied physics. 1994, Vol 33, Num 9A, pp 5107-5108 ; 1 ; ref : 5 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Contrainte Diffraction neutron Domaine température 273-400 K Domaine température 65-273 K Dépendance température Etude expérimentale Extinction Intensité Matériau semiconducteur Monocristal Silicium Si Non métal
- Keyword (en)
- Stresses Neutron diffraction Temperature range 273-400 K Temperature range 65-273 K Temperature dependence Experimental study Extinction Intensity Semiconductor materials Monocrystals Silicon Nonmetals
- Keyword (es)
- Intensidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A12 Neutron diffraction and scattering / 001B60A12L Single-crystal and powder diffraction
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4251176
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.33.5107 
https://dx.doi.org/10.1143/JJAP.33.5107
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