Study of the growth rate of diamond by hot-filament CVD
- Author
- SUN ZHOU; ZHENG ZHIHAO; XU NING; ZHANG XIAFENG
East China normal univ., dep. physics, Shangai 200062, China - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 25, Num 1, pp 47-52 ; ref : 8 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Couche épitaxique Diamant synthétique Diamant Dépôt chimique phase vapeur modifié Dépôt chimique phase vapeur Effet pression Effet température Epitaxie Etude expérimentale Hydrogène MEB Méthane Réacteur épitaxial Taux croissance
- Keyword (en)
- Thin films Epitaxial layers Synthetic diamond Diamonds Modified chemical vapor deposition Chemical vapor deposition Pressure effects Temperature effects Epitaxy Experimental study Hydrogen SEM Methane Epitaxial reactor Growth rate
- Keyword (es)
- Diamante sintético Depósito químico fase vapor modificado Reactor epitaxial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4275336
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(94)90200-3 
https://dx.doi.org/10.1016/0921-5107(94)90200-3
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