InGaAs/GaAs/InGaP multiple-quantum-well lasers prepared by gas-source molecular beam epitaxy
- Author
- KUO, J. M; CHEN, Y. K; WU, M. C; CHIN, M. A
AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Applied physics letters. 1991, Vol 59, Num 22, pp 2781-2783 ; ref : 9 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Croissance Densité Epitaxie Faisceau moléculaire Laser Seuil Température ambiante Vitesse Source gaz
- Keyword (en)
- Growth Relative density Epitaxy Molecular beam Laser Threshold Room temperature Velocity
- Keyword (es)
- Crecimiento Densidad relativa Epitaxia Haz molecular Laser Umbral Temperatura ambiente Velocidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00E Statistical physics, thermodynamics, and nonlinear dynamical systems / 001B00E70 Thermodynamics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4303794
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.105858 
https://dx.doi.org/10.1063/1.105858
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