Theoretical comparison of the stability characteristics of capped and uncapped GexSi1-x strained epilayers
- Autor
- JAIN, S. C1 ; GOSLING, T. J1 ; WILLIS, J. R; BULLOUGH, R; BALK, P1
[1] Dimes-T.U. Delft, 2600 Delft, Netherlands - Fuente
Solid-state electronics. 1992, Vol 35, Num 8, pp 1073-1079 ; ref : 19 ref
- ISSN
- 0038-1101
- Campo Científico
- Electronics
- Editor
- Elsevier Science, Oxford
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Accommodation réseau Capping Composé minéral Couche mince Densité dislocation Dislocation interfaciale Epaisseur Etude théorique Germanium Siliciure Relaxation structurale Semiconducteur Stabilité structurale Vecteur Burgers Couche contraint Transistor MOSFET
- Palabra clave (in)
- Mismatch lattice Capping Inorganic compound Thin film Dislocation density Misfit dislocation Thickness Theoretical study Germanium Silicides Structure relaxation Semiconductor materials Structure stability Burgers vector
- Palabra clave (es)
- Acomodación red Capping Compuesto inorgánico Capa fina Densidad dislocación Dislocación interfacial Espesor Estudio teórico Germanio Siliciuro Relajación estructural Semiconductor(material) Estabilidad estructural Vector Burgers
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4382300
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(92)90007-Y 
https://dx.doi.org/10.1016/0038-1101(92)90007-Y
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