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Impurities in commercial-scale magnetic Czochralski silicon : axial versus transverse magnetic fields

Author
RAVISHANKAR, P. S; BRAGGINS, T. T; THOMAS, R. N
Westinghouse sci. technology cent., Pittsburgh PA 15235, United States
Source

Journal of crystal growth. 1990, Vol 104, Num 3, pp 617-628 ; ref : 21 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Champ magnétique Circuit intégré Concentration Convection naturelle Semiconducteur Siloxane polymère Viscosité magnétique
Keyword (en)
Magnetic field Integrated circuit Concentration Natural convection Semiconductor materials Siloxane polymer
Keyword (es)
Campo magnético Circuito integrado Concentración Convección natural Semiconductor(material) Siloxano polímero
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40A Electromagnetism; electron and ion optics / 001B40A90 Other topics in electromagnetism; electron and ion optics

Discipline
Physics : electromagnetism
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4386582

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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