Evaluation of the stopping depth of nonradiative recombination centers in Al0.5Ga0.5As by Ar+ ion beam sputtering by photoluminescence measurements
- Autor
- AKITA, K; TANEYA, M; SUGIMOTO, Y; HIDAKA, H; TAJIMA, M
Optoelectronics technology res. lab., Tsukuba Ibaraki 300-26, Japan - Fuente
Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 4, pp 3274-3278 ; ref : 26 ref
- CODEN
- JVTAD6
- ISSN
- 0734-2101
- Campo Científico
- Metallurgy, welding; Physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Couche multiple Epaisseur Etude expérimentale Faisceau ionique Photoluminescence Centre recombinaison non radiatif Profondeur arrêt
- Palabra clave (in)
- Multiple layer Thickness Experimental study Ion beam Photoluminescence
- Palabra clave (es)
- Capa múltiple Espesor Estudio experimental Haz iónico Fotoluminiscencia
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H90 Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and whiskers
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4423688
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.576577 
https://dx.doi.org/10.1116/1.576577
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