First-principles study of He in Si
- Author
- ALATALO, M1 ; PUSKA, M. J; NIEMINEN, R. M
[1] Univ. Helsinki, res. inst. theoretical physics, 00170 Helsinki, Finland - Source
Physical review. B, Condensed matter. 1992, Vol 46, Num 19, pp 12806-12809 ; ref : 21 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffusion Energie totale Etude théorique Hélium Impureté interstitielle Lacune Méthode ab initio Méthode dynamique moléculaire Semiconducteur Silicium
- Keyword (en)
- Diffusion Total energy Theoretical study Helium Interstitial impurities Vacancy Ab initio method Molecular dynamics method Semiconductor materials Silicon
- Keyword (es)
- Difusión Energía total Estudio teórico Helio Impureza intersticial Cavidad Método ab initio Método dinámico molecular Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4472321
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.46.12806 
https://dx.doi.org/10.1103/PhysRevB.46.12806
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