Formation of high-density etch pits on a Si surface after low-temperature heating in an ultrahigh vacuum
- Author
- NAKAMURA, N; OHSHIMA, T; NAKAGAWA, K
Hitachi Ltd, cent. res. lab., Kokubunji, Tokyo 185, Japan - Source
Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp 3775-3778 ; 1 ; ref : 10 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Condensation faisceau moléculaire Couche mince Cristallinité Défaut cristallin Défaut croissance Défaut surface Etude expérimentale Figure attaque Homoépitaxie Morphologie Pastille électronique Semiconducteur Silicium Surface Traitement thermique Ultravide Non métal
- Keyword (en)
- Chemical etching Molecular beam condensation Thin film Crystallinity Crystal defect Growth defect Surface defect Experimental study Etch pit Homoepitaxy Morphology Wafer Semiconductor materials Silicon Surface Heat treatment Ultrahigh vacuum Non metal
- Keyword (es)
- Ataque químico Condensación haz molecular Capa fina Cristalinidad Defecto cristalino Defecto crecimiento Defecto superficie Estudio experimental Figura ataque Homoepitaxia Morfología Pastilla electrónica Semiconductor(material) Silicio Superficie Tratamiento térmico Ultravacío No metal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4474635
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.31.3775 
https://dx.doi.org/10.1143/JJAP.31.3775
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