Fast degradation of boron-doped strained Si(1-x)Gex layers by 1-MeV electron irradiation
- Author
- VANHELLEMONT, J1 ; TRAUWAERT, M.-A1 ; POORTMANS, J1 ; CAYMAX, M1 ; CLAUWS, P
[1] Interuniv. micro-electronics cent., 3001 Leuven, Belgium - Source
Applied physics letters. 1993, Vol 62, Num 3, pp 309-311 ; ref : 7 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Bore Capacité électrique Caractéristique capacité tension Caractéristique courant tension Composition chimique Composé minéral Courant fuite Electron Etude expérimentale Fluence Germanium Impureté Interaction défaut cristallin Irradiation Jonction p n Niveau défaut Niveau peu profond Phénomène transport Piégeage porteur charge Semiconducteur Silicium Température Trou
- Keyword (en)
- Low temperature Boron Capacitance Voltage capacity curve Voltage current curve Chemical composition Inorganic compound Leakage current Electrons Experimental study Fluence Germanium Impurity Crystal defect interaction Irradiation p n junction Defect level Shallow level Transport process Charge carrier trapping Semiconductor materials Silicon Temperature Hole
- Keyword (es)
- Baja temperatura Boro Capacitancia Característica capacidad tensión Característica corriente tensión Composición química Compuesto inorgánico Corriente escape Electrón Estudio experimental Fluencia Germanio Impureza Interacción defecto cristalino Irradiación Unión p n Nivel poco profundo Fenómeno transporte Captura portador carga Semiconductor(material) Silicio Temperatura Hoyo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4498063
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.108970 
https://dx.doi.org/10.1063/1.108970
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