Negative and positive ions from CF4 and CF4/O2 rf discharges in etching Si
- Author
- YUN LIN; OVERZET, L. J
Univ. Texas at Dallas, Erik Jonsson school eng. computer sci., plasma applications lab., Richardson TX 75083-0688, United States - Source
Applied physics letters. 1993, Vol 62, Num 7, pp 675-677 ; ref : 26 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Application plasma Décharge électrique Etude expérimentale Gaz moléculaire Gravure plasma Ion négatif Ion positif Mélange gaz Oxygène Molécule Radiofréquence Silicium Spectre masse Méthane(tétrafluoro)
- Keyword (en)
- Plasma application Electric discharge Experimental study Molecular gas Plasma etching Negative ion Positive ion Gas mixture Oxygen Molecules Radiofrequency Silicon Mass spectrum
- Keyword (es)
- Aplicación plasma Descarga eléctrica Estudio experimental Gas molecular Grabado plasma Ión negativo Ión positivo Mezcla gas Oxígeno Molécula Radiofrequencia Silicio Espectro masa
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B75 Plasma devices
- Discipline
- Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4557069
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.108836 
https://dx.doi.org/10.1063/1.108836
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