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Formation of hexafluorosilicate on Si surface treated in NH4F investigated by photoemission and surface infrared spectroscopy

Author
NIWANO, M; KURITA, K; TAKEDA, Y; MIYAMOTO, N
Tohoku univ., res. inst. electrical communication, Sendai 980, Japan
Source

Applied physics letters. 1993, Vol 62, Num 9, pp 1003-1005 ; ref : 16 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Attaque chimique Etude expérimentale Mode liaison Réaction chimique Réaction surface Semiconducteur Silicium Solution basique Spectre IR Spectrométrie photoélectron Surface Traitement surface Ammonium hexafluorosilicate Non métal
Keyword (en)
Chemical etching Experimental study Binding mode Chemical reaction Surface reaction Semiconductor materials Silicon Basic solution Infrared spectrum Photoelectron spectrometry Surface Surface treatment Non metal
Keyword (es)
Ataque químico Estudio experimental Modo de enlace Reacción química Reacción superficie Semiconductor(material) Silicio Solución básica Espectro IR Espectrometría fotoelectrón Superficie Tratamiento superficie No metal
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4573627

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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