Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structured substrates
- Author
- FRATESCHI, N. C; OSINSKI, J. S; BEYLER, C. A; DAPKUS, P. D
Univ. Southern California, national cent. integrated photonic technology, dep. electrical eng., Los Angeles CA 90089, United States - Source
IEEE photonics technology letters. 1992, Vol 4, Num 3, pp 209-212 ; ref : 19 ref
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dépôt chimique phase vapeur Etude expérimentale Gallium Arséniure Gallium Indium Arséniure Mixte Laser semiconducteur Puits quantique Seuil Substrat
- Keyword (en)
- Chemical vapor deposition Experimental study Gallium Arsenides Gallium Indium Arsenides Mixed Semiconductor laser Quantum well Threshold Substrate
- Keyword (es)
- Depósito químico fase vapor Estudio experimental Galio Arseniuro Galio Indio Arseniuro Mixto Laser semiconductor Pozo cuántico Umbral Substrato
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4590533
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/68.122368 
https://dx.doi.org/10.1109/68.122368
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