Ion irradiation enhanced crystal nucleation in amorphous Si thin films
- Author
- IM, J. S; ATWATER, H. A
California inst. technology, Thomas J. Watson Sr. lab. applied physics, Pasadena CA 91125, United States - Source
Applied physics letters. 1990, Vol 57, Num 17, pp 1766-1768 ; ref : 15 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Couche mince Etude expérimentale Irradiation Microscopie électronique transmission Silicium
- Keyword (en)
- Amorphization Thin film Experimental study Irradiation Transmission electron microscopy Silicon
- Keyword (es)
- Amorfización Capa fina Estudio experimental Irradiación Microscopía electrónica transmisión Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage / 001B60A80J Ion radiation effects
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4623383
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.104061 
https://dx.doi.org/10.1063/1.104061
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