Electrical transport in the amorphous Ge1-xSe2Cdx system
- Autor
- SOHAN LAL SHARMA; SHARMA, D. R
Himachal Pradesh univ., dep. physics, Shimla 171005, India - Fuente
Semiconductor science and technology. 1993, Vol 8, Num 3, pp 344-346 ; ref : 17 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Campo Científico
- Electronics; Optics; Condensed state physics
- Editor
- Institute of Physics, Bristol
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Basse température Cadmium Germanium Séléniure Mixte Champ électrique Composition chimique Composé minéral Conductivité électrique Energie activation Etat amorphe Etude expérimentale Haute température Semiconducteur Température
- Palabra clave (in)
- Low temperature Cadmium Germanium Selenides Mixed Electric field Chemical composition Inorganic compound Electrical conductivity Activation energy Amorphous state Experimental study High temperature Semiconductor materials Temperature
- Palabra clave (es)
- Baja temperatura Cadmio Germanio Seleniuro Mixto Campo eléctrico Composición química Compuesto inorgánico Conductividad eléctrica Energía activación Estado amorfo Estudio experimental Alta temperatura Semiconductor(material) Temperatura
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4642424
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/8/3/007 
https://dx.doi.org/10.1088/0268-1242/8/3/007
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