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Observation of extremely long electron-spin-relaxation times in p-type δ-doped GaAs/AlxGa1-x As double heterostructures

Author
WAGNER, J1 ; SCHNEIDER, H1 ; RICHARDS, D1 ; FISCHER, A; PLOOG, K
[1] Fraunhofer-Inst. Angewandte Festköperphysik, 7800 Freiburg, Germany
Source

Physical review. B, Condensed matter. 1993, Vol 47, Num 8, pp 4786-4789 ; ref : 14 ref

CODEN
PRBMDO
ISSN
0163-1829
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
American Institute of Physics, Woodbury, NY / American Physical Society, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Basse température Béryllium Composé minéral Dopage plan Electron Etude expérimentale Gallium Arséniure Hétérojonction Interaction porteur charge Interaction échange Photoluminescence Relaxation spin Résolution temporelle Semiconducteur Température Trou
Keyword (en)
Aluminium Gallium Arsenides Mixed Low temperature Beryllium Inorganic compound Planar doping Electrons Experimental study Gallium Arsenides Heterojunction Charge carrier interaction Exchange interaction Photoluminescence Spin relaxation Time resolution Semiconductor materials Temperature Hole
Keyword (es)
Aluminio Galio Arseniuro Mixto Baja temperatura Berilio Compuesto inorgánico Doping plano Electrón Estudio experimental Galio Arseniuro Heterounión Interacción portador carga Interacción intercambio Fotoluminiscencia Relajación spin Resolución temporal Semiconductor(material) Temperatura Hoyo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4669236

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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