Surface stress and interface formation
- Author
- TROMP, R. M
IBM, Thomas J. Watson res. cent., res. div., Yorktown Heights NY 10598, United States - Source
Physical review. B, Condensed matter. 1993, Vol 47, Num 12, pp 7125-7127 ; ref : 14 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adsorption gaz solide Arsenic Contrainte Croissance cristalline Degré recouvrement Epitaxie Etude théorique Germanium Haute température Interface solide solide Migration atome Semiconducteur Silicium Surface Non métal
- Keyword (en)
- Gas solid adsorption Arsenic Constraint Crystal growth Coverage rate Epitaxy Theoretical study Germanium High temperature Solid solid interface Atom migration Semiconductor materials Silicon Surface Non metal
- Keyword (es)
- Adsorción gas sólido Arsénico Coacción Crecimiento cristalino Grado recubrimiento Epitaxia Estudio teórico Germanio Alta temperatura Interfase sólido sólido Migración átomo Semiconductor(material) Silicio Superficie No metal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4676753
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.47.7125 
https://dx.doi.org/10.1103/PhysRevB.47.7125
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