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Outdiffusion and subsequent desorption of volatile SiO molecules during annealing of thick SiO2 films in vacuum

Author
TAKAKUWA, Y; NIHEI, M; MIYAMOTO, N
Tohoku univ., res. inst. electrical communication, Aoba-ku, Sendai 980, Japan
Source

Japanese journal of applied physics. 1993, Vol 32, Num 4A, pp L480-L483 ; 2 ; ref : 15 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Composé minéral Couche mince Diffusion Désorption Emission photoélectronique Etude expérimentale Rayon X Recuit sous vide Recuit thermique Silicium Oxyde Surface
Keyword (en)
Inorganic compound Thin film Diffusion Desorption Photoelectron emission Experimental study X ray Vacuum annealing Thermal annealing Silicon Oxides Surface
Keyword (es)
Compuesto inorgánico Capa fina Difusión Desorción Emisión fotoelectrónica Estudio experimental Rayos X Recocido en el vacío Recocido térmico Silicio Óxido Superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35M Surface energy; thermodynamic properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4706936

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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