Large increase of refractive index and compactness in siloxane-type spin-on-glass induced by ion implantation
- Autor
- MORIYA, N; SHACHAM-DIAMAND, Y; KALISH, R
Technion-Israel inst. technology, solid state inst., dep. physics, Haifa 32000, Israel - Fuente
Applied physics letters. 1990, Vol 57, Num 2, pp 108-110 ; ref : 8 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Indice réfraction Théorie mesure
- Palabra clave (in)
- Refraction index Measure theory
- Palabra clave (es)
- Indice refracción Teoría medición
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Disciplina
- Electronics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4727777
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.103958 
https://dx.doi.org/10.1063/1.103958
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