Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon
- Autor
- NEBEL, C. E; STREET, R. A
Xerox Palo Alto res. cent, Palo Alto CA 94304, United States - Fuente
Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 5, pp 721-731 ; ref : 20 ref
- ISSN
- 0958-6644
- Campo Científico
- Crystallography; Condensed state physics
- Editor
- Taylor & Francis, London
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Champ électrique Composé minéral Conductivité électrique Courant limité charge espace Etat amorphe Etude expérimentale Homojonction Mobilité dérive Mobilité porteur charge Régime permanent Réponse transitoire Semiconducteur Silicium amorphe hydrogéné Système hydrogène silicium
- Palabra clave (in)
- Electric field Inorganic compound Electrical conductivity Space charge limited current Amorphous state Experimental study Homojunction Drift mobility Charge carrier mobility Steady state Transient response Semiconductor materials Hydrogenated amorphous silicon
- Palabra clave (es)
- Campo eléctrico Compuesto inorgánico Conductividad eléctrica Corriente limitada carga espacio Estado amorfo Estudio experimental Homounión Movilidad deriva Movilidad portador carga Régimen permanente Respuesta transitoria Semiconductor(material)
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4807548
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:9:\"\u0000*\u0000jtitle\";s:111:\"Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties\";s:9:\"\u0000*\u0000stitle\";s:73:\"Philos. mag., B, Phys. condens. matter, Struct. electron. opt. magn. prop\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"67\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"721\";s:8:\"\u0000*\u0000epage\";s:3:\"731\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0958-6644\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NEBEL\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"STREET, R. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:9:\"\u0000*\u0000jtitle\";s:111:\"Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties\";s:9:\"\u0000*\u0000stitle\";s:73:\"Philos. mag., B, Phys. condens. matter, Struct. electron. opt. magn. prop\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"67\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"721\";s:8:\"\u0000*\u0000epage\";s:3:\"731\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0958-6644\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NEBEL\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"STREET, R. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:9:\"\u0000*\u0000jtitle\";s:111:\"Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties\";s:9:\"\u0000*\u0000stitle\";s:73:\"Philos. mag., B, Phys. condens. matter, Struct. electron. opt. magn. prop\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"67\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"721\";s:8:\"\u0000*\u0000epage\";s:3:\"731\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0958-6644\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NEBEL\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"STREET, R. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:9:\"\u0000*\u0000jtitle\";s:111:\"Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties\";s:9:\"\u0000*\u0000stitle\";s:73:\"Philos. mag., B, Phys. condens. matter, Struct. electron. opt. magn. prop\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"67\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"721\";s:8:\"\u0000*\u0000epage\";s:3:\"731\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0958-6644\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NEBEL\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"STREET, R. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:9:\"\u0000*\u0000jtitle\";s:111:\"Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties\";s:9:\"\u0000*\u0000stitle\";s:73:\"Philos. mag., B, Phys. condens. matter, Struct. electron. opt. magn. prop\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"67\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"721\";s:8:\"\u0000*\u0000epage\";s:3:\"731\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0958-6644\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"NEBEL\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C. E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"STREET, R. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"Space-charge-limited currents at low temperatures in hydrogenated amorphous silicon\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
