Influence of oxygen concentration and annealing on morphology and electrical properties of semi-insulating polycrystalline silicon
- Autor
- LOMBARDO, S1 ; CAMPISANO, S. U1 ; BAROETTO, F
[1] Dip. fisica univ., 95129 Catania, Italy - Fuente
Applied physics letters. 1993, Vol 63, Num 4, pp 470-472 ; ref : 20 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composition chimique Conductivité électrique Etude expérimentale Grosseur grain Matériau hétérogène Microstructure Polycristal Recuit thermique Silicium Oxyde Silicium
- Palabra clave (in)
- Chemical composition Electrical conductivity Experimental study Grain size Heterogeneous material Microstructure Polycrystal Thermal annealing Silicon Oxides Silicon
- Palabra clave (es)
- Composición química Conductividad eléctrica Estudio experimental Grosor grano Material heterogéneo Microestructura Policristal Recocido térmico Silicio Óxido Silicio
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4834154
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110027 
https://dx.doi.org/10.1063/1.110027
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