Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy
- Author
- CHANG, L. B; SHAI, L. Z
Chung-Cheng inst. technology, dep. electrical eng., Taoyuan 33509, Taiwan, Province of China - Source
Solid-state electronics. 1993, Vol 36, Num 7, pp 1049-1054 ; ref : 14 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Amélioration Caractéristique fonctionnement Epitaxie Fabrication Gallium Indium Phosphure Mixte Hétérojonction double Laser injection Laser semiconducteur Méthode phase liquide
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Improvement Performance characteristic Epitaxy Manufacturing Gallium Indium Phosphides Mixed Double heterojunction Injection laser Semiconductor laser Growth from liquid
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Mejoría Característica funcionamiento Epitaxia Fabricación Galio Indio Fosfuro Mixto Heterounión doble Laser inyección Laser semiconductor Método fase líquida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4848468
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(93)90123-8 
https://dx.doi.org/10.1016/0038-1101(93)90123-8
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