Influence of sintering profile on the resistivity of low-Curie-point PTCR ceramics
- Autor
- YUH-YIH LU; CHUNG-HUNG LAI; TSEUNG-YUEN TSENG
National Chiao-Tung univ., dep. electronics eng., Hsinchu, Taiwan, Province of China - Fuente
Materials letters (General ed.). 1993, Vol 17, Num 3-4, pp 141-145 ; ref : 18 ref
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Caractéristique capacité tension Centre accepteur Conductivité électrique Céramique oxyde Etat électronique surface Etude expérimentale Frittage Grosseur grain Trempage
- Palabra clave (in)
- Voltage capacity curve Acceptor center Electrical conductivity Oxide ceramics Surface electron state Experimental study Sintering Grain size Soaking
- Palabra clave (es)
- Característica capacidad tensión Centro aceptor Conductividad eléctrica Cerámica óxido Estado electrónico superficie Estudio experimental Sinterización Grosor grano Remojo
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 4868294
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0167-577X(93)90073-7 
https://dx.doi.org/10.1016/0167-577X(93)90073-7
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