Femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers
- Author
- SUN, C.-K1 ; CHOI, H. K; WANG, C. A; FUJIMOTO, J. G
[1] Harvard univ., div. applied sci., Cambridge MA 02138, United States - Source
Applied physics letters. 1993, Vol 63, Num 1, pp 96-98 ; ref : 17 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Femtoseconde Gallium Indium Arséniure Mixte Laser injection Laser semiconducteur Puits quantique Couche contrainte
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Femtosecond Gallium Indium Arsenides Mixed Injection laser Semiconductor laser Quantum well Strained layer
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Femtosegundo Galio Indio Arseniuro Mixto Laser inyección Laser semiconductor Pozo cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4877578
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.109709 
https://dx.doi.org/10.1063/1.109709
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