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Fabrication of silicon nanostructures with a scanning tunneling microscope

Author
SNOW, E. S; CAMPBELL, P. M; MCMARR, P. J
Naval res. lab., Washington DC 20375, United States
Source

Applied physics letters. 1993, Vol 63, Num 6, pp 749-751 ; ref : 9 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Attaque chimique Etude expérimentale Microscopie force atomique Microscopie tunnel balayage Procédé fabrication Semiconducteur Silicium Traitement surface Echelle nanométrique Non métal
Keyword (en)
Chemical etching Experimental study Atomic force microscopy Scanning tunneling microscopy Manufacturing process Semiconductor materials Silicon Surface treatment Nanometer scale Non metal
Keyword (es)
Ataque químico Estudio experimental Microscopía fuerza atómica Microscopía túnel barrido Procedimiento fabricación Semiconductor(material) Silicio Tratamiento superficie No metal
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4908149

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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