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Variation de la contrainte des verres de silice sous cycle thermique

Author
BOUCHARD, H1 ; AZELMAD, A; CURRIE, J. F; MEUNIER, M
[1] Ecole polytech., dép. génie physique, groupe couches minces, Montréal PQ H3C 3A7, Canada
Conference title
Canadian semiconductor technology conference
Conference name
Canadian semiconductor technology conferenceConférence canadienne sur la technologie des semiconducteurs (6 ; Ottawa ON 1992-08-11)
Author (monograph)
BARIBEAU, Jean-Marc (Editor)
Source

Canadian journal of physics (Print). = Revue canadienne de physique. 1992, Vol 70, Num 10-11, pp 830-833 ; ref : 12 ref

CODEN
CJPHAD
ISSN
0008-4204
Scientific domain
Optics; Atomic molecular physics; Condensed state physics; Physics
Publisher
National Research Council of Canada, Ottawa
Publication country
Canada
Document type
Conference Paper
Language
French
Keyword (fr)
Bore Composé minéral Concentration impureté Contrainte mécanique Dopage Etude expérimentale Phosphosilicate Recuit thermique Silicium Oxyde Verre Viscosité
Keyword (en)
Boron Inorganic compound Impurity density Mechanical stress Doping Experimental study Phosphosilicates Thermal annealing Silicon Oxides Glass Viscosity
Keyword (es)
Boro Compuesto inorgánico Concentración impureza Tensión mecánica Doping Estudio experimental Fosfosilicato Recocido térmico Silicio Óxido Vidrio Viscosidad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20H Creep

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4912227

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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