An analytical model for snapback in a n-channel SOI MOSFET's
- Author
- HUANG, J. S. T; KUENG, J. S; FABIAN, T
Honeywell Inc., solid state electronics cent., Plymouth MN 55441, United States - Source
I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 9, pp 2082-2091 ; ref : 6 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Canal n Caractéristique électrique Courant électrique Hystérésis Technologie silicium sur isolant Transistor MOS Transistor effet champ Saut courant électrique
- Keyword (en)
- n channel Electrical characteristic Electric current Hysteresis Silicon on insulator technology MOS transistor Field effect transistor
- Keyword (es)
- Canal n Característica eléctrica Corriente eléctrica Histéresis Tecnología silicio sobre aislante Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4940000
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.83734 
https://dx.doi.org/10.1109/16.83734
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