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ECR/magnetic mirror coupled plasma etching of GaAs using CH4:H2:Ar

Author
LAW, V. J; INGRAM, S. G; JONES, G. A. C
Cavendish lab., Cambridge CB3 0HE, United Kingdom
Source

Semiconductor science and technology. 1991, Vol 6, Num 9, pp 945-947 ; ref : 10 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Aluminium Gallium Arséniure Mixte Attaque chimique Cinétique Conductivité électrique Couche mince Etude expérimentale Gallium Arséniure Gravure plasma Hétérojonction Réacteur plasma Semiconducteur Température Traitement surface
Keyword (en)
Aluminium Gallium Arsenides Mixed Chemical etching Kinetics Electrical conductivity Thin film Experimental study Gallium Arsenides Plasma etching Heterojunction Plasma reactor Semiconductor materials Temperature Surface treatment
Keyword (es)
Aluminio Galio Arseniuro Mixto Ataque químico Cinética Conductividad eléctrica Capa fina Estudio experimental Galio Arseniuro Grabado plasma Heterounión Reactor plasma Semiconductor(material) Temperatura Tratamiento superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4940830

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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