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Edge absorption in GaAs modified by laser radiation

Author
DZHUMAMUKHAMBETOV, N. G; DMITRIEV, A. G; UKHANOV, YU. I
State tech. univ., Leningrad, Ussr
Source

Soviet physics. Semiconductors. 1991, Vol 25, Num 1, pp 100-101 ; ref : 5 ref

ISSN
0038-5700
Scientific domain
Electronics; Condensed state physics
Publisher
American Institute of Physics, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Absorption optique Coefficient absorption Composé minéral Etude expérimentale Faisceau laser Gallium Arséniure Irradiation Limite absorption Semiconducteur Température
Keyword (en)
Optical absorption Absorptance Inorganic compound Experimental study Laser beam Gallium Arsenides Irradiation Absorption edge Semiconductor materials Temperature
Keyword (es)
Absorción óptica Coeficiente absorción Compuesto inorgánico Estudio experimental Haz láser Galio Arseniuro Irradiación Límite absorción Semiconductor(material) Temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4951360

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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