A novel technique for the measurement of generation lifetime in undoped polysilicon material using the principle of charge centroids
- Author
- MCDAID, L. J; HALL, S; ECCLESTON, W
Univ. Liverpool, dep. electrical eng. electronics, Liverpool L69 3BX, United Kingdom - Source
Semiconductor science and technology. 1991, Vol 6, Num 10, pp 1032-1035 ; ref : 6 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Durée vie Etude expérimentale Génération porteur charge Méthode mesure Paire électron trou Polycristal Semiconducteur Silicium
- Keyword (en)
- Lifetime Experimental study Charge carrier generation Measurement method Electron hole pair Polycrystal Semiconductor materials Silicon
- Keyword (es)
- Tiempo vida Estudio experimental Generación portador carga Método medida Par electrón hueco Policristal Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4955736
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/6/10/015 
https://dx.doi.org/10.1088/0268-1242/6/10/015
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