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Manipulation of adsorbed atoms and creation of new structures on room-temperature surfaces with a scanning tunneling microscope

Author
WHITMAN, L. J; STROSCIO, J. A; DRAGOSET, R. A; CELOTTA, R. J
National inst. standarts technology, optical physics div., Gaithesburg MD 20899, United States
Source

Science (Washington, D.C.). 1991, Vol 251, Num 4998, pp 1206-1210 ; ref : 20 ref

CODEN
SCIEAS
ISSN
0036-8075
Scientific domain
Multidisciplinary
Publisher
American Association for the Advancement of Science, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Adsorbant minéral Adsorbat métallique Adsorption Césium Diffusion superficielle Etude expérimentale Gallium Arséniure Indium Antimoniure Microscopie tunnel balayage Semiconducteur Structure surface
Keyword (en)
Inorganic adsorbent Metallic adsorbate Adsorption Cesium Surface diffusion Experimental study Gallium Arsenides Indium Antimonides Scanning tunneling microscopy Semiconductor materials Surface structure
Keyword (es)
Adsorbente inorgánico Adsorbato metálico Adsorción Cesio Difusión superficial Estudio experimental Galio Arseniuro Indio Antimoniuro Microscopía túnel barrido Semiconductor(material) Estructura superficie
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4966016

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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