A parametric study of extrinsic bistability in the current-voltage curves of resonant-tunneling diodes
- Author
- JOGAI, B; KOENIG, E. T
Universal Energy Systems, Inc., Dayton OH 45432, United States - Source
Journal of applied physics. 1991, Vol 69, Num 5, pp 3381-3383 ; ref : 22 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bistabilité Caractéristique courant tension Conductivité différentielle négative Diode tunnel Diode Effet tunnel résonnant Etude théorique Mesure Simulation ordinateur
- Keyword (en)
- Bistability Voltage current curve Negative differential conductivity Tunnel diode Diode Resonant tunnel effect Theoretical study Measurement Computer simulation
- Keyword (es)
- Biestabilidad Característica corriente tensión Conductividad diferencial negativa Diodo túnel Diodo Efecto túnel resonante Estudio teórico Medida Simulación computadora
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4968583
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.348961 
https://dx.doi.org/10.1063/1.348961
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