Photoluminescence of InGaN films growth at high temperature by metalorganic vapor phase epitaxy
- Author
- YOSHIMOTO, N; MATSUOKA, T; SASAKI, T; KATSUI, A
NTT Opto-Electronics Laboratories, 162 Tokai, Ibaraki 319-11, Japan - Source
Applied physics letters. 1991, Vol 59, Num 18, pp 2251-2253 ; ref : 4 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Composé minéral Concentration porteur charge Couche mince Dépôt chimique phase vapeur Effet Hall Etude expérimentale Gallium Indium Nitrure Mixte Photoluminescence Préparation Semiconducteur Température Support saphir
- Keyword (en)
- Chemical composition Inorganic compound Charge carrier concentration Thin film Chemical vapor deposition Hall effect Experimental study Gallium Indium Nitrides Mixed Photoluminescence Preparation Semiconductor materials Temperature
- Keyword (es)
- Composición química Compuesto inorgánico Concentración portador carga Capa fina Depósito químico fase vapor Efecto Hall Estudio experimental Galio Indio Nitruro Mixto Fotoluminiscencia Preparación Semiconductor(material) Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4979326
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.106086 
https://dx.doi.org/10.1063/1.106086
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