Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition : arsine versus tertiarybutylarsine
- Author
- WATKINS, S. P; HAACKE, G
American Cyanamid Co., chemical res. div., Stanford CA 06904-0060, United States - Source
Applied physics letters. 1991, Vol 59, Num 18, pp 2263-2265 ; ref : 19 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Carbone Centre accepteur Composé minéral Composé organométallique Concentration impureté Concentration porteur charge Couche épitaxique Dépôt chimique phase vapeur Effet Hall Energie liaison Etude expérimentale Exciton Gallium Arséniure Impureté résiduelle Photoluminescence Pression partielle Préparation Semiconducteur Température
- Keyword (en)
- Carbon Acceptor center Inorganic compound Organometallic compound Impurity density Charge carrier concentration Epitaxial film Chemical vapor deposition Hall effect Binding energy Experimental study Exciton Gallium Arsenides Residual impurity Photoluminescence Partial pressure Preparation Semiconductor materials Temperature
- Keyword (es)
- Carbono Centro aceptor Compuesto inorgánico Compuesto organometálico Concentración impureza Concentración portador carga Capa epitáxica Depósito químico fase vapor Efecto Hall Energía enlace Estudio experimental Excitón Galio Arseniuro Impureza residual Fotoluminiscencia Presión parcial Preparación Semiconductor(material) Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4979328
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.106064 
https://dx.doi.org/10.1063/1.106064
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