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Positron mobility in thermally grown SiO2 measured by Doppler broadening technique

Author
KONG, Y; LEUNG, T. C; ASOKA-KUMAR, P; NIELSEN, B; LYNN, K. G
Brookhaven national lab., Upton NY 11973, United States
Source

Journal of applied physics. 1991, Vol 70, Num 5, pp 2874-2876 ; ref : 17 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium Annihilation positon Composé minéral Effet Doppler Etude expérimentale Etude théorique Interface solide solide Largeur raie spectrale Semiconducteur Silicium Oxyde Silicium Structure MOS
Keyword (en)
Aluminium Positron annihilation Inorganic compound Doppler effect Experimental study Theoretical study Solid solid interface Spectral line width Semiconductor materials Silicon Oxides Silicon MOS structure
Keyword (es)
Aluminio Aniquilación positón Compuesto inorgánico Efecto Doppler Estudio experimental Estudio teórico Interfase sólido sólido Anchura raya espectral Semiconductor(material) Silicio Óxido Silicio Estructura MOS
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H70 Other interactions of matter with particles and radiation / 001B70H70B Positron annihilation

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4979955

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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