Effect of bottom oxide on the integrity of interpolysilicon ultrathin ONO (oxide/nitride/oxide) films
- Author
- NAITO, Y; HIROFUJI, Y; IWASAKI, H; OKADA, H
Matsushita Electric Industrial Corp., Ltd, basic res. lab., Moriguchi-shi Osaka 570, Japan - Source
Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 635-638 ; ref : 11 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation Composé minéral Condensateur Couche mince Couche multiple Diffusion mutuelle Défaut Dépôt chimique phase vapeur Etude expérimentale Hétérojonction Phosphore Polycristal Préparation Silicium Nitrure Silicium
- Keyword (en)
- Characterization Inorganic compound Capacitor Thin film Multiple layer Interdiffusion Defect Chemical vapor deposition Experimental study Heterojunction Phosphorus Polycrystal Preparation Silicon Nitrides Silicon
- Keyword (es)
- Caracterización Compuesto inorgánico Condensador Capa fina Capa múltiple Difusión mútua Defecto Depósito químico fase vapor Estudio experimental Heterounión Fósforo Policristal Preparación Silicio Nitruro Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5040426
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2086521 
https://dx.doi.org/10.1149/1.2086521
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