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Effect of bottom oxide on the integrity of interpolysilicon ultrathin ONO (oxide/nitride/oxide) films

Author
NAITO, Y; HIROFUJI, Y; IWASAKI, H; OKADA, H
Matsushita Electric Industrial Corp., Ltd, basic res. lab., Moriguchi-shi Osaka 570, Japan
Source

Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 635-638 ; ref : 11 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Caractérisation Composé minéral Condensateur Couche mince Couche multiple Diffusion mutuelle Défaut Dépôt chimique phase vapeur Etude expérimentale Hétérojonction Phosphore Polycristal Préparation Silicium Nitrure Silicium
Keyword (en)
Characterization Inorganic compound Capacitor Thin film Multiple layer Interdiffusion Defect Chemical vapor deposition Experimental study Heterojunction Phosphorus Polycrystal Preparation Silicon Nitrides Silicon
Keyword (es)
Caracterización Compuesto inorgánico Condensador Capa fina Capa múltiple Difusión mútua Defecto Depósito químico fase vapor Estudio experimental Heterounión Fósforo Policristal Preparación Silicio Nitruro Silicio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5040426

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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