A phenomenological model of ion-induced crystallization and amorphization
- Author
- CARTER, G; NOBES, M. J
Univ. Salford, dep. electronic electrical eng., Salford M5 4WT, United Kingdom - Source
Journal of materials research. 1991, Vol 6, Num 10, pp 2103-2108 ; ref : 33 ref
- CODEN
- JMREEE
- ISSN
- 0884-2914
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- Materials Research Society, Warrendale, PA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Couche mince Cristallisation Epitaxie Etat amorphe Ion Irradiation Modèle phénoménologique Recristallisation Semiconducteur
- Keyword (en)
- Amorphization Thin film Crystallization Epitaxy Amorphous state Ions Irradiation Phenomenological model Recrystallization Semiconductor materials
- Keyword (es)
- Amorfización Capa fina Cristalización Epitaxia Estado amorfo Ión Irradiación Modelo fenomenológico Recristalización Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5045697
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1557/JMR.1991.2103 
https://dx.doi.org/10.1557/JMR.1991.2103
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