A three-step method for the De-embedding of high-frequency S-parameter measurements
- Author
- HANJIN CHO; BURK, D. E
Univ. Florida, dep. electrical eng., Gainesville FL 32611, United States - Source
I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1371-1375 ; ref : 12 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyseur réseau Composant électronique Essai Haute fréquence Mesure Paramètre s Régime signal faible Schéma équivalent Dispositif en essai Transistor bipolaire
- Keyword (en)
- Network analyzer Electronic component Test High frequency Measurement s parameter Small signal behavior Equivalent circuit Device under test Bipolar transistor
- Keyword (es)
- Analizador red Componente electrónico Ensayo Alta frecuencia Medida Parámetro s Régimen señal débil Esquema equivalente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5047594
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.81628 
https://dx.doi.org/10.1109/16.81628
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