Charge-state-dependent relaxation and positron states at vacancy defects in GaAs
- Autor
- LAASONEN, K; ALATALO, M; PUSKA, M. J; NIEMINEN, R. M
Helsinki univ. technology, lab. physics, Espoo 02150, Finland - Fuente
Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 37, pp 7217-7224 ; ref : 20 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Institute of Physics, Bristol
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Annihilation positon Composé minéral Etude théorique Gallium Arséniure Lacune Relaxation Semiconducteur
- Palabra clave (in)
- Positron annihilation Inorganic compound Theoretical study Gallium Arsenides Vacancy Relaxation Semiconductor materials
- Palabra clave (es)
- Aniquilación positón Compuesto inorgánico Estudio teórico Galio Arseniuro Cavidad Relajación Semiconductor(material)
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 5051824
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/3/37/015 
https://dx.doi.org/10.1088/0953-8984/3/37/015
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