A new aspect of mechanical stress effects in scaled MOS devices
- Author
- HAMADA, A; FURUSAWA, T; SAITO, N; TAKEDA, E
Hitachi Ltd, cent. res. lab., Tokyo 185, Japan - Source
I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 4, pp 895-900 ; ref : 11 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse contrainte Caractéristique électrique Contrainte mécanique Dispositif semiconducteur Encapsulation Méthode analytique Perturbation Procédé fabrication Résultat expérimental Seuil tension Simulation Submicromètre Technologie MOS Transconductance
- Keyword (en)
- Stress analysis Electrical characteristic Mechanical stress Semiconductor device Encapsulation Analytical method Perturbation Manufacturing process Experimental result Voltage threshold Simulation Submicrometer MOS technology Transconductance
- Keyword (es)
- Análisis tensión Característica eléctrica Tensión mecánica Dispositivo semiconductor Encapsulación Método analítico Perturbación Procedimiento fabricación Resultado experimental Umbral tensión Simulación Submicrómetro Tecnología MOS Transconductancia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F22 Miscellaneous
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5058152
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/16.75220 
https://dx.doi.org/10.1109/16.75220
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